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K9K1208U0M-YIB0 - 64M x 8 Bit NAND Flash Memory

General Description

- SE is recommended to coupled to GND or Vcc and should not be toggled during reading or programming.

1.

X can be "High" or "Low" =>

L must be set to "Low" 2.

Explain how pointer operation works in detail.

3.

Key Features

  • and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www. intl. samsungsemi. com/Memory/Flash/datasheets. html The attached data sheets are prepared and approved by.

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Full PDF Text Transcription for K9K1208U0M-YIB0 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K9K1208U0M-YIB0. For precise diagrams, and layout, please refer to the original PDF.

K9K1208U0M-YCB0, K9K1208U0M-YIB0 Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 FLASH MEMORY History 1. Initial issue - The followings are ...

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ion No 0.0 FLASH MEMORY History 1. Initial issue - The followings are disprepancy items between K9K5608U0M (256Mb DDP) and K9K1208U0M (512Mb DDP). AC Characteristics Read Cycle Time (tRC) Write Cycle Time (tWC) WE High hold Time (tWH) Data Hold Time (tDH) RE High Hold Time (tREH) K9K5608U0M Min. 50ns Min. 50ns Min. 15ns Min. 10ns Min. 15ns K9K1208U0M Min. 60ns Min. 60ns Min. 25ns Min. 15ns Min. 25ns Draft Date June 19th 2000 Remark Preliminary 0.1 1. Changed Input / Output Capacitance - Input / Output Capacitance (Max.) : 20 pF --> 30pF - Input Capacitance (Max.) : 20 pF --> 30pF 1.

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