- The WE must be held high when outputs are activated.
Jan.
Key Features
and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www. intl. samsungsemi. com/Memory/Flash/datasheets. html The attached data sheets are prepared and approved by.
Full PDF Text Transcription for K9K1208U0A-YIB0 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K9K1208U0A-YIB0. For precise diagrams, and layout, please refer to the original PDF.
K9K1208U0A-YCB0, K9K1208U0A-YIB0 Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 FLASH MEMORY History 1. Initial issue - Changed /SE(pin # 6...
View more extracted text
ion No 0.0 FLASH MEMORY History 1. Initial issue - Changed /SE(pin # 6, Spare Area Enable) pin to N.C ( No Connection). So, /SE pin is don’ t-cared regardless of external logic input level and is fixed as low internally. Draft Date Dec. 6th 2000 Remark Preliminary 0.1 1. Changed plane address in Copy-Back Program Dec. 28th 2000 - A14, the plane address, of source and destination page address must be the same. => A14 and A25, the plane address, of source and destination page address must be the same. 1. In addition, explain WE function in pin description - The WE must be held high when outputs are activated. Jan. 17th 2001
K9K1208U0A-YIB0 Datasheet
