K9F5616D0C - 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
Samsung Semiconductor
Download the K9F5616D0C datasheet PDF.
This datasheet also covers the K9F variant, as both devices belong to the same 32m x 8 bit / 16m x 16 bit nand flash memory family and are provided as variant models within a single manufacturer datasheet.
General Description
Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity.
The device is offered in 1.8V, 2.65V, 3.3V Vcc.
Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market.
Key Features
and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www. samsung. com/Products/Semiconductor/Flash/TechnicalInfo/datasheets. htm The attached datasheets are prepared and approved by.
Full PDF Text Transcription for K9F5616D0C (Reference)
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K9F5616D0C. For precise diagrams, and layout, please refer to the original PDF.
K9F5608Q0C K9F5608D0C K9F5608U0C K9F5616Q0C K9F5616D0C K9F5616U0C FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. H...
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8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 1.0 Initial issue. 1.Pin assignment of TBGA dummy ball is changed. (before) DNU --> (after) N.C 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36) 3. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 37) 4. Add the specification of Block Lock scheme.(Page 32~35) 5. Pin assignment of TBGA A3 ball is changed. (before) N.C --> (after) Vss 6. Pin assignment of WSOP #38 pin is changed. (before) LOCKPRE --> (after) N.C 2.0 1. The Maximum operating current is changed. Program : Icc2 20mA-->25mA Erase :
K9F5616D0C Datasheet
