K7B403625B - 128Kx36/x32 & 256Kx18 Synchronous SRAM

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K7B403625B
Manufacturer	Samsung semiconductor
File Size	470.43 KB
Description	128Kx36/x32 & 256Kx18 Synchronous SRAM
Datasheet	K7B403625B Datasheet
Note	This datasheet PDF includes multiple part numbers: K7B403625B, K7B. Please refer to the document for exact specifications by model.
Additional preview pages of the K7B403625B datasheet.

Product details

Description

The K7A403600B, K7A403200B and K7A401800B are 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

Features

Synchronous Operation.
2 Stage Pipelined operation with 4 Burst.
On-Chip Address Counter.
Self-Timed Write Cycle.
On-Chip Address and Control Registers.
VDD= 3.3V+0.3V/-0.165V Power Supply.
VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
5V Tolerant Inputs Except I/O Pins.
Byte Writable Function.
Global Write Enable Controls a full bus-width write.
P.

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Other Datasheets by Samsung semiconductor

K7B403625M - 128Kx36-Bit Synchronous Burst SRAM
K7B403225B - 128Kx36/x32 & 256Kx18 Synchronous SRAM
K7B401825B - 128Kx36/x32 & 256Kx18 Synchronous SRAM
K7B161825A - 512Kx36 & 1Mx18 Synchronous SRAM
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K7B321825M - 1Mx36 & 2Mx18 Synchronous SRAM

Published: Apr 7, 2005 |