K7B163635B - 512Kx36 & 1Mx18 Synchronous SRAM

Product Overview

Samsung Electronics

Datasheet Details

Part number	K7B163635B
Manufacturer	Samsung Electronics
File Size	424.73 KB
Description	512Kx36 & 1Mx18 Synchronous SRAM
Datasheet	K7B163635B Datasheet
Note	This datasheet PDF includes multiple part numbers: K7B163635B, K7B161835B. Please refer to the document for exact specifications by model.
Additional preview pages of the K7B163635B datasheet.

Product details

Description

The K7B163635B and K7B161835B are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

Features

Synchronous Operation.
On-Chip Address Counter.
Self-Timed Write Cycle.
On-Chip Address and Control Registers.
VDD= 2.5 or 3.3V +/- 5% Power Supply.
5V Tolerant Inputs Except I/O Pins.
Byte Writable Function.
Global Write Enable Controls a full bus-width write.
Power Down State via ZZ Signal.
LBO Pin allows a choice of either a interleaved burst or a linear burst.
Three Chip Enables for.

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Other Datasheets by Samsung Electronics

K7B161835B - 512Kx36 & 1Mx18 Synchronous SRAM

Published: Jun 12, 2010 |