K6T4016V3C - CMOS SRAM

Samsung Semiconductor

Datasheet Details

Part number	K6T4016V3C
Manufacturer	Samsung Semiconductor
File Size	151.65 KB
Description	CMOS SRAM
Datasheet	K6T4016V3C Datasheet

Full PDF Text Transcription for K6T4016V3C (Reference)

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K6T4016V3C, K6T4016U3C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No History 0.0 Initial draft 0.1 0....

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MOS SRAM Revision History Revision No History 0.0 Initial draft 0.1 0.11 Revised - Speed bin change Commercial : 70/85ns → 70/85/100ns Industrial : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at read/write → 4mA at read ICC1 : 5mA → 6mA ICC2 : 50mA → 45mA ISB : 0.5mA → 0.3mA ISB1 : 10µA → 15µA for commercial parts Errata correction 1.0 Finalize Draft Date January 13, 1998 June 12, 1998 Remark Advance Preliminary August 13, 1998 November 16, 1998 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSU

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