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K6T0808V1D - CMOS SRAM

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K6T0808V1D, K6T0808U1D Family Document Title 32Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 History Initial draft 1.0 Fin...

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S SRAM Revision History Revision No. 0.0 History Initial draft 1.0 Finalize - Add 70ns part in KM62U256D Family - Show ICC read only, and increased value ICC = 2mA →ICC Read = 5mA - Seperate ICC1 read and write ICC1 = 5mA→ICC1 Read = 5mA, ICC1 Write = 10mA - Improved standby current(ISB1) Commercial part : 10µA→5µA Extended and Industrial part : 20µA→5µA - Improved VIL(Min.) : 0.4V→0.6V - Improved power dissipation : 0.7W→1W Draft Data April 1, 1997 November 12, 1997 Remark Preliminary Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO, LTD. reserve the right to change the specificati

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