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Green Product
STM8309
Oct.13, 2006
SamHop Microelectronics Corp.
Dual Enhancement Mode Field Effect Transistor ( N and P Channel)
PRODUCT SUMMARY
VDSS
30V
(N-Channel)
Max
PRODUCT SUMMARY
VDSS
-30V
(P-Channel)
ID
7A
RDS(ON) ( m Ω )
ID
-6A
RDS(ON) ( m Ω ) Max
35 @ VGS = -10V
52 @ VGS = -4.5V
23 @ VGS = 10V
30 @ VGS = 4.5V
D1
8
D1
7
D2
6
D2
5
SO-8
1
1 2
3
4
S1
G1
S2
G2
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a@TJ=25 C b -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation
a a
Symbol
N-Channel P-Channel
30
20
7 28
Unit V V A A A W C
VDS VGS ID IDM IS PD TJ, TSTG
-30
20
-6
-24
1.7
-1.7
2.