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SC8270S - Dual N-Channel Enhancement Mode Field Effect Transistor

Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.61 0.03 BOTTOM VIEW 0.65 LAND.

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Datasheet Details

Part number SC8270S
Manufacturer SamHop
File Size 141.83 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SC8270S Datasheet

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Full PDF Text Transcription

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SC8270SGreen Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor Preliminary PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Max 10.2 @ VGS=4.5V 10.5 @ VGS=4.0V 24V 9A 11.5 @ VGS=3.8V 12.0 @ VGS=3.1V 14.0 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.61 0.03 BOTTOM VIEW 0.65 LAND PATTERN (REFERENCE) 0.65 2.55 0.03 8270S Date Code S1 S2 G1 G2 S1 S2 0.65 0.65 0.65 0.65 1-pin index mark S1 0.11 0.01 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 6 - φ 0.31 φ 0.
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