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S DT 452AP
S amHop Microelectronics C orp. Augus t , 2002
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
-30V
F E AT UR E S
( m W ) TYP
ID
-5.3A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
52 @ V G S = -10V 85 @ V G S = -4.5V
R ugged and reliable. S OT-223 P ackage.
D
D D G S OT-223
S
D G S OT-223 (J 23Z)
S
G
S
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed
a
S ymbol V DS V GS @ TJ=125 C ID IDM IS PD T J , T S TG
Limit -30 20 -5.3 -16 5.3 3 0.
SDT452AP Datasheet
