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S DU/D9916
S amHop Microelectronics C orp. Augus t , 2002
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( m W ) TYP
ID
20A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
25 @ V G S = 4.5V 35 @ V G S = 2.7V
R ugged and reliable. TO-252 and TO-251 P ackage.
D
D G S
G D
S
G
S DU S E R IE S TO-252AA(D-P AK)
S DD S E R IE S TO-251(l-P AK)
S
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed
a
S ymbol V DS V GS @ TJ=125 C ID IDM IS PD T J , T S TG
Limit 20 12 20 60 20 50 0.
SDD9916 Datasheet
