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Gre r Pro
SDU/D02N25
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Field Effect Transistor
PRODUCT SUMMARY
V DSS
250V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
ID
2A
R DS(ON) ( Ω) Typ
3.2 @ VGS=10V
G S
G D
S
SDU SERIES TO - 252AA(D-PAK)
SDD SERIES TO - 251(I-PAK)
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
a c
Limit 250 ±30 TA=25°C TA=70°C 2 1.5 6 10.