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SPP7465 - P-Channel MOSFET

Description

The SPP7465 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • -60V/-8A,RDS(ON)=90mΩ@VGS=-10V.
  • -60V/-6A,RDS(ON)=100mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOP.
  • 8 package design PIN.

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Datasheet Details

Part number SPP7465
Manufacturer SYNC POWER
File Size 465.00 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP7465 Datasheet
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SPP7465 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP7465 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  -60V/-8A,RDS(ON)=90mΩ@VGS=-10V  -60V/-6A,RDS(ON)=100mΩ@VGS=-4.
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