Datasheet4U Logo Datasheet4U.com

SPP7407 - P-Channel MOSFET

Description

The SPP7407 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • -20V/-3.4A,RDS(ON)=100mΩ@VGS=-4.5V.
  • -20V/-2.4A,RDS(ON)=125mΩ@VGS=-2.5V.
  • -20V/-1.7A,RDS(ON)=180mΩ@VGS=-1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-323 ( SC.
  • 70 ) package design PIN.

📥 Download Datasheet

Datasheet preview – SPP7407

Datasheet Details

Part number SPP7407
Manufacturer SYNC POWER
File Size 339.72 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP7407 Datasheet
Additional preview pages of the SPP7407 datasheet.

📁 Similar Datasheet

Other Datasheets by SYNC POWER

Full PDF Text Transcription

Click to expand full text
SPP7407 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP7407 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  -20V/-3.4A,RDS(ON)=100mΩ@VGS=-4.5V  -20V/-2.4A,RDS(ON)=125mΩ@VGS=-2.
Published: |