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SPN8902 - N-Channel MOSFET

Description

The SPN8902 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

Features

  • 100V/2A, RDS(ON)=330mΩ@VGS=10V.
  • 100V/1A, RDS(ON)=350mΩ@VGS=4.5V.
  • High density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-223 package design PIN.

📥 Download Datasheet

Datasheet Details

Part number SPN8902
Manufacturer SYNC POWER
File Size 327.57 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN8902 Datasheet

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