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SPN8080 - N-Channel MOSFET

Description

The SPN8080 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • ‹ 80V/80A,RDS(ON)= 4.7mΩ@VGS= 10V ‹ 80V/37A,RDS(ON)= 8.7mΩ@VGS= 6V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ TO-220-3L package design.

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Datasheet Details

Part number SPN8080
Manufacturer SYNC POWER
File Size 272.26 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN8080 Datasheet
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SPN8080 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8080 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES ‹ 80V/80A,RDS(ON)= 4.7mΩ@VGS= 10V ‹ 80V/37A,RDS(ON)= 8.7mΩ@VGS= 6V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ TO-220-3L package design APPLICATIONS z DC/DC Converter z Load Switch SMPS Secondary Side Synchronous Rectifier z PIN CONFIGURATION( TO-220-3L ) www.
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