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SPN8205W - Common-Drain Dual N-Channel MOSFET

Description

The SPN8205W is the Common-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 20V/5.0A,RDS(ON)=24mΩ@VGS=4.5V.
  • 20V/3.0A,RDS(ON)=34mΩ@VGS=2.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TSSOP.
  • 8 package design.

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Datasheet Details

Part number SPN8205W
Manufacturer SYNC POWER
File Size 500.61 KB
Description Common-Drain Dual N-Channel MOSFET
Datasheet download datasheet SPN8205W Datasheet
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SPN8205W 6Common-Drain Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8205W is the Common-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES  20V/5.0A,RDS(ON)=24mΩ@VGS=4.5V  20V/3.0A,RDS(ON)=34mΩ@VGS=2.
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