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SPN4546 - N-Channel MOSFET

Description

The SPN4546 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 40V/6.0A,RDS(ON)=48mΩ@VGS=10V.
  • 40V/5.0A,RDS(ON)=55mΩ@VGS=4.5V.
  • 40V/4.5A,RDS(ON)=80mΩ@VGS=2.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOP.
  • 8 package design.

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Datasheet Details

Part number SPN4546
Manufacturer SYNC POWER
File Size 449.48 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN4546 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN4546 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4546 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES  40V/6.0A,RDS(ON)=48mΩ@VGS=10V  40V/5.0A,RDS(ON)=55mΩ@VGS=4.5V  40V/4.5A,RDS(ON)=80mΩ@VGS=2.
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