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SPN4392 - N-Channel MOSFET

Description

The SPN4392 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • ‹ 30V/22A,RDS(ON)= 8mΩ@VGS=10V ‹ 30V/18A,RDS(ON)= 12mΩ@VGS=4.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ SOP.
  • 8P package design PIN.

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Datasheet Details

Part number SPN4392
Manufacturer SYNC POWER
File Size 276.56 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN4392 Datasheet
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Full PDF Text Transcription

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SPN4392 www.DataSheet4U.com N-Channel Enhancement Mode MOSFET APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z High-Side DC/DC Converter z Load Switch z DSC z LCD Display inverter DESCRIPTION The SPN4392 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES ‹ 30V/22A,RDS(ON)= 8mΩ@VGS=10V ‹ 30V/18A,RDS(ON)= 12mΩ@VGS=4.
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