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SPN3446 - N-Channel MOSFET

Description

The SPN3446 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 20V/6.0A,RDS(ON)=33mΩ@VGS=4.5V.
  • 20V/5.0A,RDS(ON)=38mΩ@VGS=2.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23-6L package design PIN.

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Datasheet Details

Part number SPN3446
Manufacturer SYNC POWER
File Size 503.80 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN3446 Datasheet
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SPN3446 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3446 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  20V/6.0A,RDS(ON)=33mΩ@VGS=4.5V  20V/5.0A,RDS(ON)=38mΩ@VGS=2.
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