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SPN340T06 - N-Channel MOSFET

Description

The SPN340T06 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 60V/340A, RDS(ON)=1.9mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • Enhanced Avalanche Ruggedness.
  • TO-220-3L package design.

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Datasheet preview – SPN340T06

Datasheet Details

Part number SPN340T06
Manufacturer SYNC POWER
File Size 404.69 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN340T06 Datasheet
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SPN340T06 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN340T06 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.. FEATURES  60V/340A, RDS(ON)=1.
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