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SPN2N7002K - N-Channel Enhancement Mode MOSFET

Description

The SPN2N7002K is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

Features

  • 60V/0.50A , RDS(ON)= 2.0Ω@VGS=10V.
  • 60V/0.20A , RDS(ON)= 4.0Ω@VGS= 4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23 package design PIN.

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Datasheet Details

Part number SPN2N7002K
Manufacturer SYNC POWER
File Size 469.85 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SPN2N7002K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN2N7002K N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2N7002K is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 640mA DC and can deliver pulsed currents up to 950mA. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. APPLICATIONS  Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.  High saturation current capability.
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