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SPN2622 - Dual N-Channel Enhancement Mode MOSFET

Description

The SPN2622 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Features

  • ‹ 20V/4.0A,RDS(ON)= 80mΩ@VGS=4.5V ‹ 20V/3.4A,RDS(ON)= 100mΩ@VGS=2.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ SOT-23-6L package design PIN.

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Datasheet Details

Part number SPN2622
Manufacturer SYNC POWER
File Size 179.29 KB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SPN2622 Datasheet

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