Datasheet4U Logo Datasheet4U.com

SPN2328 - N-Channel MOSFET

Description

The SPN2328 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

Features

  • 150V/2A, RDS(ON)=350mΩ@VGS=10V.
  • 150V/1A, RDS(ON)=400mΩ@VGS=4.5V.
  • High density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23-6L package design PIN.

📥 Download Datasheet

Datasheet Details

Part number SPN2328
Manufacturer SYNC POWER
File Size 236.34 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN2328 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SPN2304 N-Channel MOSFET SYNC
SPN2318S23RGB N-Channel MOSFET VBsemi
SPN2016100MPSA Coating Inductors DARFON
SPN20161R0NPSA Coating Inductors DARFON
SPN20161R5NPSA Coating Inductors DARFON

Other Datasheets by SYNC POWER

Part Number Description
SPN2322 Dual N-Channel MOSFET
SPN2324 N-Channel MOSFET
SPN2326 N-Channel MOSFET
SPN2302 N-Channel MOSFET
SPN2302A N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
SPN2328 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2328 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN2328 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  Powered System  DC/DC Converter  Load Switch FEATURES  150V/2A, RDS(ON)=350mΩ@VGS=10V  150V/1A, RDS(ON)=400mΩ@VGS=4.
Published: |