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SPN180N10 - N-Channel Enhancement Mode MOSFET

Description

The SPN180N10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 100V/184A, RDS(ON)=3.7mΩ@VGS=10V.
  • High density cell design or extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-220-3L/TO-220F-3L/TO-263-2L/PPAK5x6 package design PIN.

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Datasheet Details

Part number SPN180N10
Manufacturer SYNC POWER
File Size 333.02 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SPN180N10 Datasheet
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SPN180N10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN180N10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  AC/DC Synchronous Rectifier  Load Switch  UPS  Power Tool  Motor Control FEATURES  100V/184A, RDS(ON)=3.
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