Datasheet4U Logo Datasheet4U.com

SPN1026 - Dual N-Channel MOSFET

Description

The SPN1026 is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

Features

  • 60V/0.50A , RDS(ON)=5.0Ω@VGS=10V.
  • 60V/0.30A , RDS(ON)=5.5Ω@VGS=5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-563 (SC-89-6L) package design PIN.

📥 Download Datasheet

Datasheet preview – SPN1026

Datasheet Details

Part number SPN1026
Manufacturer SYNC POWER
File Size 426.84 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SPN1026 Datasheet
Additional preview pages of the SPN1026 datasheet.

📁 Similar Datasheet

Other Datasheets by SYNC POWER

Full PDF Text Transcription

Click to expand full text
SPN1026 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1026 is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 320mA DC and can deliver pulsed currents up to 1.0A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. APPLICATIONS  Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.  High saturation current capability.
Published: |