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SPN166N06 - N-Channel MOSFET

Description

The SPN166N06 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 60V/166A,RDS(ON)=3.1mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-220-3L/TO-252-2L/PPAK5x6-8L/ TOLL-8 package design PIN.

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Datasheet Details

Part number SPN166N06
Manufacturer SYNC POWER
File Size 432.64 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN166N06 Datasheet
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SPN166N06 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN166N06 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  DC/DC Converter  Load Switch  SMPS Secondary Side Synchronous Rectifier  Motor Control  Power Tool FEATURES  60V/166A,RDS(ON)=3.
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