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SPN160T15 - N-Channel MOSFET

Description

The SPN160T15 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

  • 150V/160A,RDS(ON)= 6mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability PIN.

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Datasheet Details

Part number SPN160T15
Manufacturer SYNC POWER
File Size 135.79 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN160T15 Datasheet
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SPN160T15 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN160T15 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN160T15 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  DC/DC Converter  Load Switch  SMPS Secondary Side Synchronous Rectifier  Motor Control  Power Tool FEATURES  150V/160A,RDS(ON)= 6mΩ@VGS=10V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability PIN CONFIGURATION PART MARKING 2023/02/23 Ver 0.
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