ELM6472-7PS
FEATURES
High Output Power: P1d B=39.0d Bm (Typ.) High Gain: G1d B=10.5d B (Typ.) High PAE: ηadd=35% (Typ.) Broad Band: 6.4 to 7.2GHz Internally matched Plastic Package for SMT applications DESCRIPTION
The ELM6472-7PS is a power Ga As FET that is internally matched for standard munication bands to provide optimum power and gain. ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg.C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT TSTG TCH Rating 15 -5 42.8 -40 to +125 175 Unit V V W deg.C deg.C
REMENDED OPERATING CONDITION (Case Temperature Tc=25 deg.C)
Item DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature Symbol VDS IGF IGR TCH RG=100 ohm RG=100 ohm Condition Limit <10 <+16 >-2.2 155 Unit V m A m A deg.C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 deg.C)
Item Drain Current Trans conductance Pinch-off Voltage Gage-Source Breakdown Voltage Output Power at 1d B...
