ELM6472-4PS
FEATURES
High Output Power: P1d B=36.0d Bm (Typ.) High Gain: G1d B=11.0d B (Typ.) High PAE: hadd=36% (Typ.) Frequency Band: 6.4 to 7.2GHz Internally matched Plastic Package for SMT applications DESCRIPTION
The ELM6472-4PS is a power Ga As FET that is internally matched for standard munication bands to provide optimum power and gain.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg.C) Item Symbol Drain-Source Voltage VDS Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VGS PT TSTG TCH
Rating 15 -5 27.3 -40 to +125 175
Unit V V W deg.C deg.C
REMENDED OPERATING CONDITION (Case Temperature Tc=25 deg.C) Item Symbol Condition DC Input Voltage VDS Forward Gate Current Reverse Gate Current Channel Temperature IGF IGR TCH RG=100 ohm RG=100 ohm
Limit <10 <+16 >-2.2 155
Unit V m A m A deg.C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 deg.C) Item Drain Current Trans conductance Pinch-off Voltage Gate-Source Breakdown Voltage Output Power at 1d B G.C.P....
