Datasheet4U Logo Datasheet4U.com

VNL5090N3-E - fully protected low-side driver

Description

2 1 2 3 SOT-223 SO-8

Features

  • Type VNL5090N3-E 41 V VNL5090S5-E Vclamp RDS(on) 90 mΩ ID 13 A The VNL5090N3-E and VNL5090S5-E are monolithic devices made using STMicroelectronics® VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short-circuit. Output current limitation protects the devices in an overload condition. In case of long duration overload, the device limits the dissipated power to a saf.

📥 Download Datasheet

Datasheet preview – VNL5090N3-E

Datasheet Details

Part number VNL5090N3-E
Manufacturer STMicroelectronics
File Size 611.82 KB
Description fully protected low-side driver
Datasheet download datasheet VNL5090N3-E Datasheet
Additional preview pages of the VNL5090N3-E datasheet.

📁 Similar Datasheet

Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
VNL5090N3-E VNL5090S5-E OMNIFET III fully protected low-side driver Datasheet - production data Description 2 1 2 3 SOT-223 SO-8 Features Type VNL5090N3-E 41 V VNL5090S5-E Vclamp RDS(on) 90 mΩ ID 13 A The VNL5090N3-E and VNL5090S5-E are monolithic devices made using STMicroelectronics® VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short-circuit. Output current limitation protects the devices in an overload condition. In case of long duration overload, the device limits the dissipated power to a safe level up to thermal shutdown intervention.
Published: |