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VNL5030J-E - fully protected low-side driver

Description

The VNL5030J-E and VNL5030S5-E are monolithic devices made using STMicroelectronics® VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery.

Built-in thermal shutdown protects the chip from overtemperature and short-circuit.

Features

  • SO-8 Type VNL5030J-E VNL5030S5-E Vclamp 41 V RDS(on) 30 mΩ ID 25 A.
  • Automotive qualified.
  • Drain current: 25 A.
  • ESD protection.
  • Overvoltage clamp.
  • Thermal shutdown.
  • Current and power limitation.
  • Very low standby current.
  • Very low electromagnetic susceptibility.
  • Compliant with European directive 2002/95/EC.
  • Open drain status output VNL5030J-E VNL5030S5-E.

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Datasheet preview – VNL5030J-E

Datasheet Details

Part number VNL5030J-E
Manufacturer STMicroelectronics
File Size 523.10 KB
Description fully protected low-side driver
Datasheet download datasheet VNL5030J-E Datasheet
Additional preview pages of the VNL5030J-E datasheet.
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Full PDF Text Transcription

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PowerSSO-12 Features SO-8 Type VNL5030J-E VNL5030S5-E Vclamp 41 V RDS(on) 30 mΩ ID 25 A • Automotive qualified • Drain current: 25 A • ESD protection • Overvoltage clamp • Thermal shutdown • Current and power limitation • Very low standby current • Very low electromagnetic susceptibility • Compliant with European directive 2002/95/EC • Open drain status output VNL5030J-E VNL5030S5-E OMNIFET III fully protected low-side driver Datasheet - production data Description The VNL5030J-E and VNL5030S5-E are monolithic devices made using STMicroelectronics® VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short-circuit.
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