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VND5N07 - fully autoprotected Power MOSFET

General Description

The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications.

Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

Key Features

  • Max. on-state resistance (per ch. ) Current limitation (typ) ) Drain-Source clamp voltage RDS (on) ILIMH VCLAMP 0.2Ω 5A 70V uct(s.
  • Linear current limitation rod.
  • Thermal shutdown P.
  • Short circuit protection te.
  • Integrated clamp le.
  • Low current drawn from input pin so.
  • Diagnostic feedback through input pin b.
  • Esd protection - O.
  • Direct access to the gate of the power mosfet ) (analog driving) Obsolete Product(s.
  • Compatible with standard Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VND5N07 OMNIFET II fully autoprotected Power MOSFET Features Max. on-state resistance (per ch.) Current limitation (typ) ) Drain-Source clamp voltage RDS (on) ILIMH VCLAMP 0.2Ω 5A 70V uct(s ■ Linear current limitation rod ■ Thermal shutdown P ■ Short circuit protection te ■ Integrated clamp le ■ Low current drawn from input pin so ■ Diagnostic feedback through input pin b ■ Esd protection - O ■ Direct access to the gate of the power mosfet ) (analog driving) Obsolete Product(s ■ Compatible with standard Power MOSFET 3 1 DPAK TO-252 3 2 1 IPAK TO-251 ISOWATT200 SOT-82FM Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications.