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VND5N07-E - fully autoprotected Power MOSFET

General Description

The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications.

Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

Key Features

  • Max. on-state resistance (per ch. ) Current limitation (typ) Drain-Source clamp voltage RDS (on) ILIMH VCLAMP 0.2Ω 5A 70V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VND5N07-E OMNIFET II fully autoprotected Power MOSFET Datasheet - production data 3 1 DPAK TO-252 3 2 1 IPAK TO-251 Features Max. on-state resistance (per ch.) Current limitation (typ) Drain-Source clamp voltage RDS (on) ILIMH VCLAMP 0.2Ω 5A 70V Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.