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STWH13009 - High voltage fast-switching NPN power transistor

Description

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds anh high voltage capability.

It uses a Hollow Emitter structure to enhance switching speeds.

.

Features

  • High voltage capability.
  • Low spread of dynamic parameters.
  • Very high switching speed.

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STWH13009 High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed Applications ■ Switching mode power supplies Description The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds anh high voltage capability. It uses a Hollow Emitter structure to enhance switching speeds. . 3 2 1 TO-247 Figure 1. Internal schematic diagram Table 1. Device summary Order code STWH13009 Marking WH13009 Package TO-247 Packaging Tube October 2007 Rev 1 1/9 www.st.com 9 Absolute maximum ratings 1 Absolute maximum ratings Table 2. Symbol Absolute maximum ratings Parameter VCEV VCEO VEBO IC ICM IB IBM PTOT Tstg TJ Collector-emitter voltage (VBE = -1.
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