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STW27N60M2-EP - N-channel Power MOSFET

Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology.

Features

  • Order code V DS RDS(on) max ID STP27N60M2-EP 600 V 0.163 Ω 20 A STW27N60M2-EP 600 V 0.163 Ω 20 A 3 2 1 TO-220 3 2 1 TO-247.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • Very low turn-off switching losses.
  • 100% avalanche tested.
  • Zener-protected Figure 1: Internal schematic diagram.

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Full PDF Text Transcription

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STP27N60M2-EP, STW27N60M2-EP N-channel 600 V, 0.150 Ω typ., 20 A MDmesh™ M2 EP Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data TAB Features Order code V DS RDS(on) max ID STP27N60M2-EP 600 V 0.163 Ω 20 A STW27N60M2-EP 600 V 0.163 Ω 20 A 3 2 1 TO-220 3 2 1 TO-247  Extremely low gate charge  Excellent output capacitance (COSS) profile  Very low turn-off switching losses  100% avalanche tested  Zener-protected Figure 1: Internal schematic diagram Applications  Switching applications  Tailored for very high frequency converters (f > 150 kHz) Order code STP27N60M2-EP STW27N60M2-EP Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology.
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