STW15NM60N - N-channel Power MOSFET

This series of devices implements the second generation of MDmesh™ Technology.

This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

• www. DataSheet4U. com Type VDSS (@Tjmax) 650V 650V 650V 650V 650V RDS(on) < 0.299Ω < 0.299Ω < 0.299Ω < 0.299Ω < 0.299Ω ID 1 3 3 12 STB15NM60N STI15NM60N STF15NM60N STP15NM60N STW15NM60N 14A 14A 14A (1) 14A 14A D²PAK I²PAK TO-247 3 1 2 3 1 2 1. Limited only by maximum temperature allowed.
• 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220 TO-220FP Internal schematic diagram.