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STL9N60M2 - N-channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.

Features

  • Order code VDS @ TJmax RDS(on) max ID STL9N60M2 650 V 0.86 Ω 4.8 A.
  • Extremely low gate charge.
  • Lower RDS(on) x area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected.

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Datasheet preview – STL9N60M2

Datasheet Details

Part number STL9N60M2
Manufacturer STMicroelectronics
File Size 1.00 MB
Description N-channel Power MOSFET
Datasheet download datasheet STL9N60M2 Datasheet
Additional preview pages of the STL9N60M2 datasheet.

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Full PDF Text Transcription

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STL9N60M2 N-channel 600 V, 0.76 Ω typ., 4.8 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - production data 1 2 3 4 PowerFLAT™ 5x6 HV Features Order code VDS @ TJmax RDS(on) max ID STL9N60M2 650 V 0.86 Ω 4.8 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.
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