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STL9NK30Z - N-CHANNEL Power MOSFET

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/8 STL9NK30Z.

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Datasheet Details

Part number STL9NK30Z
Manufacturer STMicroelectronics
File Size 225.57 KB
Description N-CHANNEL Power MOSFET
Datasheet download datasheet STL9NK30Z Datasheet
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Full PDF Text Transcription

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STL9NK30Z N-CHANNEL 300V - 0.36Ω - 9A PowerFLAT™ Zener-Protected SuperMESH™Power MOSFET TYPE STL9NK30Z s s s s s s s VDSS 300 V RDS(on) < 0.4 Ω ID (1) 9A Pw (1) 75 W TYPICAL RDS(on) = 0.36 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY PowerFLAT™(5x5) (Chip Scale Package) DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
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