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STL8P4LLF6 - P-CHANNEL POWER MOSFET

Description

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed.

Features

  • Order code VDS RDS(on) max. ID PTOT STL8P4LLF6 40 V 0.0205 Ω 8 A 2.9 W.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL8P4LLF6 P-channel 40 V, 0.0175 Ω typ.,8 A, STripFET™ F6 Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package Datasheet - production data 1 2 3 4 PowerFLAT™ 3.3x3.3 Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STL8P4LLF6 40 V 0.0205 Ω 8 A 2.9 W • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed.
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