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STL8P2UH7 - P-CHANNEL POWER MOSFET

Description

This device exhibits low on-state resistance and capacitance for improved conduction and switching performance.

Features

  • Order code STL8P2UH7 VDS 20 V RDS(on)max 0.0225 Ω @ 4.5 V ID 8A.
  • Extremely low on-resistance R DS(on).
  • Ultra logic level.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL8P2UH7 P-channel 20 V, 0.0195 Ω typ., 8 A STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 2x2 package Datasheet - production data 1 2 3 1 2 3 6 5 4 PowerFLAT™ 2x2 Figure 1: Internal schematic diagram Features Order code STL8P2UH7 VDS 20 V RDS(on)max 0.0225 Ω @ 4.5 V ID 8A  Extremely low on-resistance R DS(on)  Ultra logic level Applications  Switching applications Description This device exhibits low on-state resistance and capacitance for improved conduction and switching performance. Table 1: Device summary Order code STL8P2UH7 Marking 8L2U Package Packaging PowerFLAT™ 2x2 Tape and reel For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed.
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