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STL7LN65K5AG - N-channel Power MOSFET

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

  • Order code VDS RDS(on) max. ID STL7LN65K5AG 650 V 1.15 Ω 5A.
  • AEC-Q101 qualified.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription

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STL7LN65K5AG Datasheet Automotive-grade N-channel 650 V, 0.95 Ω typ., 5 A, MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package 1 23 4 PowerFLAT 5x6 VHV D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View AM15540v6 Features Order code VDS RDS(on) max. ID STL7LN65K5AG 650 V 1.15 Ω 5A • AEC-Q101 qualified • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure.
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