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STL70N4LLF5 - N-channel Power MOSFET

Description

This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology.

Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.

Features

  • STL70N4LLF5 N-channel 40 V, 0.0055 Ω, 18 A, PowerFLAT™ (6x5) STripFET™ V Power MOSFET Preliminary Data Type STL70N4LLF5 VDSS 40 V RDS(on) max 0.0065 Ω ID 18 A (1) 1. The value is rated according Rthj-pcb.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • High avalanche ruggedness.
  • Low gate drive power losses.

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Features STL70N4LLF5 N-channel 40 V, 0.0055 Ω, 18 A, PowerFLAT™ (6x5) STripFET™ V Power MOSFET Preliminary Data Type STL70N4LLF5 VDSS 40 V RDS(on) max 0.0065 Ω ID 18 A (1) 1. The value is rated according Rthj-pcb ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses Application ■ Switching applications Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. PowerFLAT™ ( 6x5 ) Figure 1. Internal schematic diagram Table 1.
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