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STL7DN6LF3 - Dual N-channel Power MOSFET

Description

This device is a dual N-channel Power MOSFET developed using STripFET™ F3 technology.

It is designed to minimize on-resistance and gate charge to provide superior switching performance.

Table 1.

Features

  • Order code STL7DN6LF3 VDS 60 V RDS(on) max 43 mΩ ID 6.5 A.
  • Designed for automotive.

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Full PDF Text Transcription

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STL7DN6LF3 Automotive-grade dual N-channel 60 V, 35 mΩ typ., 6.5 A STripFET™ F3 Power MOSFET in PowerFLAT™ 5x6 double island Datasheet - production data 1 2 3 4 PowerFLAT™ 5x6 double island Features Order code STL7DN6LF3 VDS 60 V RDS(on) max 43 mΩ ID 6.5 A • Designed for automotive application and AEC-Q101 qualified • Logic level VGS(th) • 175 °C junction temperature • 100% avalanche rated • Wettable flank package Figure 1. Internal schematic diagram Applications • Switching applications Description This device is a dual N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. Top view Order code Table 1.
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