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STL76DN4LF7AG - Dual N-channel Power MOSFET

Description

This dual N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • Order code STL76DN4LF7AG VDS 40 V RDS(on) max. 6 mΩ ID 40 A.
  • AEC-Q101 qualified.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.
  • Wettable flank package.

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Full PDF Text Transcription

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STL76DN4LF7AG Automotive-grade dual N-channel 40 V, 5 mΩ typ., 40 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 DI Datasheet - production data Figure 1: Internal schematic diagram Features Order code STL76DN4LF7AG VDS 40 V RDS(on) max. 6 mΩ ID 40 A  AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness  Wettable flank package Applications  Switching applications Description This dual N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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