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STL4P2UH7 - P-CHANNEL POWER MOSFET

Description

This device exhibits low on-state resistance and capacitance for improved conduction and switching performance.

Table 1.

Features

  • 1 2 3 1 2 3 6 5 4 PowerFLAT™ 2x2 Figure 1. Internal schematic diagram 1(D) 2(D) 3(G) Order code STL4P2UH7 VDS 20 V RDS(on) max 0.1 Ω @ 4.5 V.
  • Ultra logic level.
  • Extremely low on-resistance RDS(on).
  • High avalanche ruggedness.
  • Low gate drive power losses ID 4A.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL4P2UH7 P-channel 20 V, 0.087 Ω typ., 4 A STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 2x2 package Datasheet - production data Features 1 2 3 1 2 3 6 5 4 PowerFLAT™ 2x2 Figure 1. Internal schematic diagram 1(D) 2(D) 3(G) Order code STL4P2UH7 VDS 20 V RDS(on) max 0.1 Ω @ 4.5 V • Ultra logic level • Extremely low on-resistance RDS(on) • High avalanche ruggedness • Low gate drive power losses ID 4A Applications • Switching applications Description This device exhibits low on-state resistance and capacitance for improved conduction and switching performance. DS 6(D) 5(D) 4(S) AM11269v1 Order code STL4P2UH7 Table 1.
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