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STL4N80K5 - N-CHANNEL POWER MOSFET

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in onresistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

  • Order code STL4N80K5 VDS 800 V RDS(on)max. 2.5 Ω.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best figure of merit (FoM).
  • Ultra low gate charge.
  • 100% avalanche tested.
  • Zener protected ID 2.5 A Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View AM15540v1.

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Full PDF Text Transcription

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STL4N80K5 N-channel 800 V, 2.1 Ω typ., 2.5 A MDMesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet − production data 1 2 3 4 PowerFLAT™ 5x6 VHV Features Order code STL4N80K5 VDS 800 V RDS(on)max. 2.5 Ω • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener protected ID 2.5 A Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View AM15540v1 Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.
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