Datasheet4U Logo Datasheet4U.com

STL38DN6F7AG - Automotive-grade N-channel Power MOSFET

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • Order code VDS RDS(on) max. ID STL38DN6F7AG 60 V 27 mΩ 10 A.
  • AEC-Q101 qualified.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STL39002Z IRED Siemens Semiconductor
STL3NK40 Power MOSFET ST Microelectronics
STL-S3 Stratum 3 Timing Module Connor-Winfield
STL-S3E Stratum 3E Timing Module Connor-Winfield
STL03S03F (STL03S03F - STL15S15F) 2W Single Output Surface Mount DC-DC Converter Superworld Electronics

Other Datasheets by STMicroelectronics

Part Number Description
STL38N65M5 N-channel Power MOSFET
STL300N4LF8 N-channel Power MOSFET
STL305N4LF8AG Automotive N-channel Power MOSFET
STL30N10F7 N-CHANNEL POWER MOSFET
STL30NF3LL N-CHANNEL MOSFET

Full PDF Text Transcription

Click to expand full text
STL38DN6F7AG Datasheet Automotive-grade N-channel 60 V, 24 mΩ typ., 10 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 double island package 1 S2 Drain on rear side 2 G2 8 D2 7 3 S1 4 G1 6 D1 5 Features Order code VDS RDS(on) max. ID STL38DN6F7AG 60 V 27 mΩ 10 A • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Published: |