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STL21N65M5
N-channel 650 V, 0.175 Ω , 17 A PowerFLAT™ (8x8) HV ultra low gate charge MDmesh™ V Power MOSFET
Features
Type STL21N65M5 VDSS @ TJmax 710 V RDS(on) max < 0.190 Ω ID 17 A (1)
' $ 3 3 3
"OTTOM VIEW
1. The value is rated according to Rthj-case ■ ■ ■
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
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Application
Switching applications
Description
The device is a N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.