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STH270N8F7-2 - N-channel MOSFET

Description

These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • Order codes VDS RDS(on) max. STH270N8F7-2 STH270N8F7-6 80 V 0.0021 Ω STP270N8F7 0.0025 Ω.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness ID 180 A G(1) G(1) S(2, 3, 4, 5, 6, 7) H2PAK-2, H2PAK-6 S(3) TO-220 H2PAK_2_6_N-CHG1DTABS234567_TO-220_N-CHG1D2TABS3.

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Full PDF Text Transcription

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STH270N8F7-2, STH270N8F7-6, STP270N8F7 Datasheet N-channel 80 V, 0.0017 Ω typ., 180 A STripFET F7 Power MOSFETs in an H²PAK-2, H²PAK-6 and TO-220 packages TAB TAB 2 3 H2 PA K 1 -2 TAB 7 1 H 2PA K -6 3 12 TO-220 D(TAB) D(2, TAB) Features Order codes VDS RDS(on) max. STH270N8F7-2 STH270N8F7-6 80 V 0.0021 Ω STP270N8F7 0.
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